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Harris power field-effect transistors IRFF130
Harris N-channel enhancement-mode power field-effect transistor
8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A.
Military/High-Rel : N V(BR)DSS (V) : 100 V(BR)GSS (V) : 20 I(D) Max. (A) : 8.0# I(DM) Max. (A) Pulsed I(D) : @Temp (шC) : IDM Max (@25шC Amb) : 32# @Pulse Width (s) (Condition) : Absolute Max. Power Diss. (W) : 25# Minimum Operating Temp (шC) : -55х Maximum Operating Temp (шC) : 150х Thermal Resistance Junc-Case : 5.0 Thermal Resistance Junc-Amb. : 175 V(GS)th Max. (V) : 4 V(GS)th (V) (Min) : 2 @(VDS) (V) (Test Condition) : @I(D) (A) (Test Condition) : 250u I(DSS) Max. (A) : 250u @V(DS) (V) (Test Condition) : 100 @Temp (шC) (Test Condition) : 25 I(GSS) Max. (A) : 100n @V(GS) (V) (Test Condition) : 20 r(DS)on Max. (Ohms) : 0.18 @V(GS) (V) (Test Condition) : 10 @I(D) (A) (Test Condition) : 4.0 g(fs) Min. (S) Trans. conduct. : 4.0 g(fs) Max; (S) Trans. conduct; : 5.5В @V(DS) (V) (Test Condition) : @I(D) (A) (Test Condition) : 4.0 C(iss) Max. (F) : 600pВ @V(DS) (V) (Test Condition) : 25 @V(GS) (V) (Test Condition) : 0 @Freq. (Hz) (Test Condition) : 1M td(on) Max (s) On time delay : 50n t(r) Max. (s) Rise time : 150n t(d)off Max. (s) Off time : 100n t(f) Max. (s) Fall time. : 150n Package Style : TO-205AF Mounting Style : T Description :
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