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2N85 / MTM2N85 / motorola n-channel enhancement mosfet
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Description = N-Channel Enhancement MOSFET
I(D) Abs. Drain Current (A) = 2.0
Absolute Max. Power Diss. (W) = 75
@(VDS) (V) (Test Condition) = 20
@I(D) (A) (Test Condition) = 1.0m
@V(DS) (V) (Test Condition) = 722
@Temp (°C) (Test Condition) = 25
@V(GS) (V) (Test Condition) = 20
@V(GS) (V) (Test Condition) = 10
@I(D) (A) (Test Condition) = 1.0
g(fs) Min. (S) Trans. conduct. = .5
@V(DS) (V) (Test Condition) = 15
@I(D) (A) (Test Condition) = 1.0
@V(DS) (V) (Test Condition) = 25
@Freq. (Hz) (Test Condition) = 1.0M
td(on) Max (s) On time delay = 50n
t(r) Max. (s) Rise time = 150n
t(d)off Max. (s) Off time = 200n
t(f) Max. (s) Fall time. = 100n
