IOWA CITY MODERATED FORSALE NEWSGROUP > Tools
> Hand Tools
> 2007
> New ECG292 NTE292 transistors - pnp silicon transistor -
New ECG292 NTE292 transistors - pnp silicon transistor -
Silicon Complementary Transistors
The NTE291 (NPN) and NTE292 (PNP) are general purpose, medium power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. These devices are especially designed for series and shunt regulators and as a driver and output stage of high-fidelity amplifiers.
Collector-Emitter Voltage (RBB = 100 Ohms, VBB = 0), VCEX
Collector-Emitter Voltage, VCEO
Continuous Collector Current (TC
Continuous Base Current (TC
Total Device Dissipation (TC = +100°C), PD
Total Device Dissipation (TC = +25°C), PD
Total Device Dissipation (TA = +25°C), PD
Operating Junction Temperature Range, Topr
Storage Temperature Range, Tstg
Lead Temperature (During Soldering, 1/8" (3.17mm) from case, 10sec max), TL
Thermal Resistance, Junction-to-Case, RthJC
Thermal Resistance, Junction-to-Ambient, RthJA
Note 1. NTE292MCP is a matched complementary pair containing 1 each of NTE291 (NPN) and NTE292 (PNP).
Electrical Characteristics: (TC = +25°C unless otherwise specified)
VCE = 120V, RBE = 100 Ohms, TC = +100°C
VCE = 120V, VBE = -1.5V, TC = +100°C
Collector-Emitter Sustaining Voltage
RBE = 100 Ohms, IC = 100mA, Note 2
Collector-Emitter Saturation Voltage
Small Signal Forward Current Transfer Ratio
VCE = 4V, IC = 500mA, f = 50kHz
Small Signal Forward Current Transfer Ratio
VCE = 4V, IC = 500mA, f = 50kHz
Note 1. Pulsed: Pulse Duration = 300µs, Duty Factor = 0.018.
Note 2. CAUTION: The sustaining voltage (VCER(sus)) MUST NOT be measured on a curve tracer.